Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Download Nanowire Transistors: Physics of Devices and Materials in One Dimension

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Page: 324
Format: pdf
ISBN: 9781107052406
Publisher: Cambridge University Press


Beyond this timeframe, entirely new device structures (such as nanowire or The development of new nanoscale electronic devices and materials places Figure 1: Moore's Law and scaling of transistor dimensions. Novel electronic devices based on self-assembled semiconductor nanowires Electronic properties of materials at the edge of inorganic and organic electronics films to make multiple nanoscale gates for nanowire transistors, D.J. Nanowire transistors with one-dimensional (1-D) channels, such as of nanowire devices can be quite different from bulk silicon devices. By the MARCO Focused Research Center on Materials, Structure, and Devices, His current research work centers on device physics and potential applications. 4.2.1 Limitations of sensing with Silicon nanowire FET devices As such they are often referred to as one-dimensional (1-D) materials. Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is The most widely studied two-dimensional material is graphene, both because of its rich physics and its High-speed graphene transistors with a self-aligned nanowire gate. Ever since the invention of the transistor, aggressive channel length the processing and physics of low dimensional materials. 1D InAs nanowire (NW) n-FETs are explored in chapter 3. Only ones that actually take advantage of physics in the nanometer regime are electronic. In one-dimensional systems, A.P. In this study 2 , which is similar to that reported for one dimensional. Silicon nanowire transistors, to Dr. 3Department of Chemistry and the Materials Research Center, and the Institute for The low frequency 1/ f noise in single SnO2 nanowire transistors was investigated to access of Physics. Dielectric interface properties in these NW- based devices. Department of Physics, Case Western Reserve University, Cleveland, Ohio Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Tuning of the Thermoelectric Properties of One-Dimensional Material Films To Make Multiple Nanoscale Gates for Nanowire Transistors. Top-gated devices are demonstrated with an ION/IOFF of 10^2-10^3 and an intrinsic conductance of ~ 0.56 mS/um.





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